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APTGT75H120TG
Full - Bridge Fast Trench + Field Stop IGBT(R) Power Module
VBUS Q1 Q3
VCES = 1200V IC = 75A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control
G1
G3
E1 Q2
OUT1
OUT2 Q4
E3
G2
G4
E2 NTC1 NTC2
E4 0/VBU S
Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
G3 E3
G4 E4
OUT2
VBUS
0/VBUS
OUT1
E1 G1
E2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-5
APTGT75H120TG - Rev 1
Reverse Bias Safe Operating Area
150A @ 1150V
July, 2006
Max ratings 1200 110 75 175 20 357
Unit V A
APTGT75H120TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 Max 250 2.1 6.5 400 Unit A V V nA
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A R G = 4.7 VGE = 15V Tj = 125C VBus = 600V IC = 75A Tj = 125C R G = 4.7
Min
Typ 5340 280 240 260 30 420 70 285 50 520 90 7
Max
Unit pF
ns
ns
mJ 8.1
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1200
Typ
Max 350 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1200V
IF = 75A
C mJ
di/dt =2000A/s
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2-5
APTGT75H120TG - Rev 1
July, 2006
IF = 75A VR = 600V
75 1.6 1.6 170 280 7 14 2.8 5.4
2.1
V ns
APTGT75H120TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.35 0.58 150 125 125 4.7 160
Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
2500 -40 -40 -40 2.5
V C N.m g
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-5
APTGT75H120TG - Rev 1
July, 2006
APTGT75H120TG
Typical Performance Curve
150 125
IC (A) Output Characteristics (VGE=15V) Output Characteristics 150 TJ = 125C
TJ=25C VGE =17V VGE =13V VGE=15V
125
TJ=125C
100
IC (A)
100 75 50 25 0
VGE =9V
75 50 25 0 0 1 2 VCE (V) 3 4
0
1
2 VCE (V)
3
4
150 125 100 IC (A) 75 50 25 0 5
Transfert Characteristics 16
T J=25C T J=125C
Energy losses vs Collector Current 14 12 E (mJ) 10 8 6 4 2 0 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175 150
Eoff V CE = 600V V GE = 15V RG = 4.7 T J = 125C Eoff Eon
Er
T J=125C
6
7
8
9
10
11
12
100
125
150
VGE (V) Switching Energy Losses vs Gate Resistance 16 14 12 E (mJ) 10 8 6 4 2 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32
Er V CE = 600V V GE =15V I C = 75A T J = 125C Eon
125 IC (A) 100 75 50 25 0 0 400 800 VCE (V) 1200 1600
V GE=15V T J=125C RG=4.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
IGBT
rectangular Pulse Duration (Seconds)
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4-5
APTGT75H120TG - Rev 1
July, 2006
APTGT75H120TG
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 0 20 40 60 IC (A) 80 100 120
Hard switching ZVS ZCS VCE =600V D=50% RG=4.7 T J=125C T c=75C
Forward Characteristic of diode 150 125 100 IF (A) 75 50 25 0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4
T J=125C TJ=125C T J=25C
maximum Effective Transient Thermal Impedance, Junction to case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.9 0.5 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT75H120TG - Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
July, 2006

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